RSQ020N03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Element Material :

SILICON

Turn-Off Delay Time :

16 ns

Rise Time :

9ns

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 5V

Mount :

Surface Mount

Factory Lead Time :

20 Weeks

JESD-609 Code :

e1

Terminal Position :

Dual

Transistor Application :

SWITCHING

Number of Pins :

6

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

2A

FET Type :

N-Channel

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.25W

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

8A

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

134m Ω @ 2A, 10V

Power Dissipation-Max :

600mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Turn On Delay Time :

7 ns

ECCN Code :

EAR99

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

2A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 10V

Drain-source On Resistance-Max :

0.235Ohm

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2012

Mounting Type :

Surface Mount

Fall Time (Typ) :

4 ns

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Pbfree Code :

yes

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)