RSQ015N06TR

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Mfr.Part #
RSQ015N06TR
Manufacturer
ROHM Semiconductor
Package / Case
SOT-23-6
Datasheet
Download
Description
MOSFET N-CH 60V 1.5A TSMT6
Stock
3,023
In Stock :
3,023

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
260
Fall Time (Typ) :
10 ns
Drain to Source Voltage (Vdss) :
60V
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Min Operating Temperature :
-55°C
Turn On Delay Time :
6 ns
Mount :
Surface Mount
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
10
Number of Channels :
1
Pin Count :
6
Continuous Drain Current (ID) :
1.5A
Max Power Dissipation :
1.25W
Drain to Source Breakdown Voltage :
60V
Radiation Hardening :
No
Drain to Source Resistance :
210mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
SWITCHING
Max Operating Temperature :
150°C
Number of Pins :
6
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
20 Weeks
Rise Time :
9ns
JESD-609 Code :
e1
Pbfree Code :
yes
Input Capacitance :
110pF
Published :
2009
Rds On Max :
290 mΩ
Package / Case :
SOT-23-6
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Number of Terminations :
6
Terminal Form :
Gull wing
Turn-Off Delay Time :
15 ns
Element Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Datasheets
RSQ015N06TR
Introducing Transistors - FETs, MOSFETs - Single ROHM Semiconductor RSQ015N06TR from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:6, Package / Case:SOT-23-6, Number of Terminations:6, RSQ015N06TR pinout, RSQ015N06TR datasheet PDF, RSQ015N06TR amp .Beyond Transistors - FETs, MOSFETs - Single ROHM Semiconductor RSQ015N06TR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor RSQ015N06TR


Tape & Reel (TR) 60V SOT-23-6

RSQ015N06TR Overview


This device's continuous drain current (ID) is 1.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 210mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).

RSQ015N06TR Features


a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 210mOhm
a 60V drain to source voltage (Vdss)


RSQ015N06TR Applications


There are a lot of ROHM Semiconductor
RSQ015N06TR applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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