RSQ035P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

101 Weeks

Power Dissipation :

1.25W

Continuous Drain Current (ID) :

3.5A

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 5V

Current Rating :

-3.5A

Pin Count :

6

Terminal Form :

Gull wing

Radiation Hardening :

No

Terminal Position :

Dual

JESD-609 Code :

e1

Turn On Delay Time :

15 ns

Pbfree Code :

yes

Turn-Off Delay Time :

45 ns

Packaging :

Tape and Reel (TR)

Resistance :

95mOhm

Fall Time (Typ) :

35 ns

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.25W Ta

Rise Time :

35ns

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Voltage - Rated DC :

-30V

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

ECCN Code :

EAR99

Mount :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

Number of Pins :

6

Threshold Voltage :

-2.5V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

6

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 10V

Published :

2006

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA