RSQ025P03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.25W Ta

Power Dissipation :

1.25W

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Voltage - Rated DC :

-30V

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

2.5A

Rise Time :

11ns

Pbfree Code :

yes

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e1

Rds On (Max) @ Id, Vgs :

110m Ω @ 2.5A, 10V

Published :

2003

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 1mA

ECCN Code :

EAR99

Radiation Hardening :

No

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

33 ns

Factory Lead Time :

20 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

320pF @ 10V

Current Rating :

-2.5A

Drain-source On Resistance-Max :

0.11Ohm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-30V

Turn On Delay Time :

8 ns

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Terminal Form :

Gull wing

Fall Time (Typ) :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

4.4nC @ 5V

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V