RGTH60TS65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Pbfree Code :

yes

Published :

2014

Max Power Dissipation :

194W

Number of Terminations :

3

ECCN Code :

EAR99

Mount :

Through Hole

Continuous Collector Current :

30A

Input Type :

Standard

Turn Off Time-Nom (toff) :

179 ns

Number of Elements :

1

Transistor Application :

POWER CONTROL

Factory Lead Time :

17 Weeks

Current - Collector Pulsed (Icm) :

120A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 30A

Max Collector Current :

58A

Reverse Recovery Time :

58 ns

REACH SVHC :

Unknown

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Td (on/off) @ 25°C :

27ns/105ns

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

650V

RoHS Status :

ROHS3 Compliant

IGBT Type :

Trench Field Stop

Collector Emitter Saturation Voltage :

1.6V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Time :

67 ns

Power - Max :

194W

Collector Emitter Breakdown Voltage :

650V

Operating Temperature :

-40°C~175°C TJ

Package / Case :

TO-247-3

Test Condition :

400V, 30A, 10 Ω, 15V

Gate Charge :

58nC