RGTH60TK65GC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Trench Field Stop

Current - Collector Pulsed (Icm) :

120A

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 30A

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

179 ns

Gate Charge :

58nC

Reach Compliance Code :

not_compliant

Factory Lead Time :

17 Weeks

Power - Max :

61W

Operating Temperature :

-40°C~175°C TJ

Transistor Application :

POWER CONTROL

Voltage - Collector Emitter Breakdown (Max) :

650V

Number of Elements :

1

Surface Mount :

No

Test Condition :

400V, 30A, 10 Ω, 15V

Number of Terminations :

3

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Type :

Standard

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Current - Collector (Ic) (Max) :

28A

Turn On Time :

67 ns

Package / Case :

TO-3PFM, SC-93-3

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Td (on/off) @ 25°C :

27ns/105ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)