RGTH60TK65DGC11

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 30A

Case Connection :

Isolated

Voltage - Collector Emitter Breakdown (Max) :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

120A

Factory Lead Time :

17 Weeks

Number of Terminations :

3

Operating Temperature :

-40°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-3PFM, SC-93-3

Transistor Application :

POWER CONTROL

Turn On Time :

67 ns

Terminal Position :

Single

IGBT Type :

Trench Field Stop

Input Type :

Standard

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 30A, 10 Ω, 15V

Current - Collector (Ic) (Max) :

28A

Reverse Recovery Time :

58ns

Td (on/off) @ 25°C :

27ns/105ns

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Reach Compliance Code :

not_compliant

Turn Off Time-Nom (toff) :

179 ns

Mounting Type :

Through Hole

Power - Max :

61W

Gate Charge :

58nC