PUMD9,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Factory Lead Time :

4 Weeks

Base Part Number :

P*MD9

Terminal Form :

Gull wing

Number of Terminations :

6

Collector Emitter Saturation Voltage :

100mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

Polarity :

NPN, PNP

Number of Pins :

6

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

47k Ω

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

JESD-609 Code :

e3

hFE Min :

100

Max Junction Temperature (Tj) :

150°C

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Number of Elements :

2

Collector Base Voltage (VCBO) :

50V

Height :

1.1mm

Resistor - Base (R1) :

10k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Ambient Temperature Range High :

150°C

Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Max Operating Temperature :

150°C

Published :

2011

Transistor Application :

SWITCHING