PUMD13,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2005

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

100mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

50V

Terminal Finish :

Tin (Sn)

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Pins :

6

Base Part Number :

MD13

Max Junction Temperature (Tj) :

150°C

Ambient Temperature Range High :

150°C

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Factory Lead Time :

4 Weeks

Resistor - Emitter Base (R2) :

47k Ω

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

hFE Min :

100

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1μA

Polarity :

NPN, PNP

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Qualification Status :

Not Qualified

Height :

1.1mm

Max Collector Current :

100mA

Resistor - Base (R1) :

4.7k Ω

JESD-609 Code :

e3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount