PUMD13,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

47k Ω

Power Dissipation :

300mW

Number of Elements :

2

Current - Collector Cutoff (Max) :

1μA

Package / Case :

6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 5V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

100mV

Vce Saturation (Max) @ Ib, Ic :

100mV @ 250µA, 5mA

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Published :

2005

Max Collector Current :

100mA

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

50V

Collector Base Voltage (VCBO) :

50V

hFE Min :

100

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Base Part Number :

MD13

Number of Pins :

6

Terminal Form :

Gull wing

Resistor - Base (R1) :

4.7k Ω

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Surface Mount :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Terminal Finish :

Tin (Sn)

Height :

1.1mm

Polarity :

NPN, PNP

Ambient Temperature Range High :

150°C

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6

RoHS Status :

ROHS3 Compliant