PSMN9R5-100PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Power Dissipation-Max :

211W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4454pF @ 50V

Fall Time (Typ) :

22.8 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Turn-Off Delay Time :

52.2 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Surface Mount :

No

Mounting Type :

Through Hole

Published :

2013

Turn On Delay Time :

22 ns

Drain-source On Resistance-Max :

0.0096Ohm

Transistor Element Material :

SILICON

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

100V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Continuous Drain Current (ID) :

89A

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Power Dissipation :

211W

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Number of Elements :

1

Packaging :

Tube

Max Dual Supply Voltage :

100V

Rise Time :

25.2ns

Radiation Hardening :

No

Element Configuration :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA