PSMN7R6-60BS118
- Mfr.Part #
- PSMN7R6-60BS118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NOW NEXPERIA PSMN7R6-60BS - POWE
- Stock
- 45,907
- In Stock :
- 45,907
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Specialized ICs
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rise Time :
- 21ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 13 ns
- Current - Continuous Drain (Id) @ 25°C :
- 92A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 149W Tc
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Max Dual Supply Voltage :
- 60V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2651pF @ 30V
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Published :
- 2012
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 7.8m Ω @ 25A, 10V
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 92A
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 19 ns
- Terminal Position :
- Single
- Power Dissipation :
- 149W
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 38.7nC @ 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Breakdown Voltage :
- 54V
- Drain-source On Resistance-Max :
- 0.0078Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 37 ns
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- PSMN7R6-60BS118

Specialized ICs NXP Semiconductors PSMN7R6-60BS118 Overview
Introducing the NOW NEXPERIA PSMN7R660BS, a high-performance power integrated circuit meticulously crafted by NXP Semiconductors. Designed with precision engineering and cutting-edge technology, this integrated circuit delivers unparalleled efficiency and reliability, making it the ideal choice for demanding industrial applications.
With a focus on quality and innovation, NXP Semiconductors has established itself as a leader in the semiconductor industry, and the PSMN7R660BS exemplifies their commitment to excellence. Whether you're powering critical systems or driving complex machinery, this integrated circuit ensures optimal performance, ensuring smooth operation and maximum productivity.
Experience the next level of power management with the NOW NEXPERIA PSMN7R660BS from NXP Semiconductors. Elevate your projects to new heights of efficiency and reliability with this state-of-the-art integrated circuit.
PSMN7R6-60BS118 Features
- High-performance power integrated circuit
- Precision engineering for optimal efficiency
- Reliable performance in demanding industrial applications
- Exemplifies NXP Semiconductors' commitment to quality and innovation
- Ensures smooth operation and maximum productivity
- State-of-the-art technology for next-level power management
PSMN7R6-60BS118 Applications
- Industrial Automation: The PSMN7R660BS is perfect for controlling and managing power systems in industrial automation equipment, ensuring reliable operation in demanding environments.
- Power Supplies: Utilize the PSMN7R660BS in power supply units to regulate voltage and current, providing stable power output for various electronic devices and systems.
- Motor Control: Incorporate the PSMN7R660BS into motor control systems to efficiently drive and control motors, optimizing performance and energy consumption in industrial machinery and appliances.
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