PSMN7R6-60BS118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Terminal Position :

Single

Continuous Drain Current (ID) :

92A

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Number of Elements :

1

Max Dual Supply Voltage :

60V

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Power Dissipation :

149W

Transistor Element Material :

SILICON

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

2651pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Pin Count :

3

Case Connection :

DRAIN

Vgs (Max) :

±20V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

54V

Power Dissipation-Max :

149W Tc

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.0078Ohm

Published :

2012

Terminal Form :

Gull wing

Turn On Delay Time :

19 ns

Fall Time (Typ) :

13 ns

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

38.7nC @ 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Rise Time :

21ns

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

37 ns