PSMN7R6-60BS118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

21ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

13 ns

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

149W Tc

Case Connection :

DRAIN

Pin Count :

3

Max Dual Supply Voltage :

60V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2651pF @ 30V

Surface Mount :

yes

Number of Terminations :

2

Transistor Application :

SWITCHING

Published :

2012

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 25A, 10V

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

FET Type :

N-Channel

Continuous Drain Current (ID) :

92A

Transistor Element Material :

SILICON

Turn On Delay Time :

19 ns

Terminal Position :

Single

Power Dissipation :

149W

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

38.7nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

54V

Drain-source On Resistance-Max :

0.0078Ohm

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Form :

Gull wing

Number of Pins :

3

Turn-Off Delay Time :

37 ns

Operating Mode :

ENHANCEMENT MODE