PSMN7R0-30MLC115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Surface Mount :

yes

Number of Terminations :

4

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Reference Standard :

IEC-60134

Gate to Source Voltage (Vgs) :

2.15V

Power Dissipation :

57W

Power Dissipation-Max :

57W Tc

Turn-Off Delay Time :

13.4 ns

JESD-30 Code :

R-PSSO-G4

Pin Count :

8

Transistor Element Material :

SILICON

Published :

2012

Radiation Hardening :

No

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

67A

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

270A

Current - Continuous Drain (Id) @ 25°C :

67A Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1076pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Gate Charge (Qg) (Max) @ Vgs :

17.9nC @ 10V

Factory Lead Time :

26 Weeks

Max Dual Supply Voltage :

30V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Fall Time (Typ) :

8.5 ns

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Number of Pins :

8

Turn On Delay Time :

9.7 ns

Drain-source On Resistance-Max :

0.009Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

15.4ns

Mounting Type :

Surface Mount

Package / Case :

SOT-1210, 8-LFPAK33

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

FET Type :

N-Channel