PSMN7R0-30MLC115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Turn On Delay Time :

9.7 ns

Reference Standard :

IEC-60134

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Pins :

8

Surface Mount :

yes

Turn-Off Delay Time :

13.4 ns

Terminal Position :

Single

Package / Case :

SOT-1210, 8-LFPAK33

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Case Connection :

DRAIN

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

30V

Published :

2012

Pin Count :

8

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

1076pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

17.9nC @ 10V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

57W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Rise Time :

15.4ns

Packaging :

Tape and Reel (TR)

Power Dissipation :

57W

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

2.15V

Rds On (Max) @ Id, Vgs :

7m Ω @ 15A, 10V

Factory Lead Time :

26 Weeks

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.009Ohm

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

8.5 ns

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G4

Pulsed Drain Current-Max (IDM) :

270A

Continuous Drain Current (ID) :

67A

Drain to Source Breakdown Voltage :

30V