PSMN7R0-30MLC
- Mfr.Part #
- PSMN7R0-30MLC
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- PSMN7R0-30MLC - N-CHANNEL 30 V 7
- Stock
- 22,210
- In Stock :
- 22,210
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 13.4 ns
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1076pF @ 15V
- Turn On Delay Time :
- 9.7 ns
- Rise Time :
- 15.4ns
- Power Dissipation :
- 57W
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G4
- Power Dissipation-Max :
- 57W Tc
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Factory Lead Time :
- 26 Weeks
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 8.5 ns
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 15A, 10V
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 8
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17.9nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 2.15V
- Pulsed Drain Current-Max (IDM) :
- 270A
- Package / Case :
- SOT-1210, 8-LFPAK33
- Number of Terminations :
- 4
- Reference Standard :
- IEC-60134
- Continuous Drain Current (ID) :
- 67A
- Max Dual Supply Voltage :
- 30V
- Terminal Form :
- Gull wing
- Published :
- 2012
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.009Ohm
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 8
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Datasheets
- PSMN7R0-30MLC
PSMN7R0-30MLC Documents
Specialized ICs Nexperia PSMN7R0-30MLC Overview
The Specialized ICs Nexperia PSMN7R0-30MLC is a robust N-channel MOSFET designed for high-efficiency power management tasks. Featuring a drain-source breakdown voltage of 30V and a continuous drain current of 67A, this component is engineered to handle significant power. The device exhibits an impressive 7mΩ on-resistance at 10V, enhancing its efficiency in various applications. Its low turn-off delay time of 13.4 ns and turn-on delay time of 9.7 ns facilitate fast switching speeds, essential for reducing energy losses during state transitions. Equipped with an input capacitance of 1076pF at 15V, it ensures smooth operation under rapid changes in gate voltage. The MOSFET’s encapsulation in a SOT-1210, 8-LFPAK33 package ensures durable integration in space-constrained environments while maintaining thermal stability.
Key Features
Continuous drain current (ID) of 67A ensuring robust performance under high-load conditions.
Drain-to-source breakdown voltage of 30V allows for efficient handling of moderate voltage levels.
Low on-resistance of 7mΩ at 10V, minimizing power losses and improving overall efficiency.
Quick turn-off delay time of 13.4 ns and turn-on delay time of 9.7 ns, critical for high-speed switching applications.
Input capacitance of 1076pF at 15V facilitating good control responsiveness.
Applications
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supplies
- Synchronous Rectification
- Battery Protection Circuit
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