PSMN7R0-100PS127
- Mfr.Part #
- PSMN7R0-100PS127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- NOW NEXPERIA PSMN7R0-100PS - POW
- Stock
- 35,630
- In Stock :
- 35,630
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Power Dissipation :
- 269W
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 100A
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 15A, 10V
- Turn On Delay Time :
- 34.6 ns
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Fall Time (Typ) :
- 49.5 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- No
- Power Dissipation-Max :
- 269W Tc
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Max Operating Temperature :
- 175°C
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Drain to Source Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 103.9 ns
- Max Dual Supply Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6686pF @ 50V
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 10V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 475A
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 45.6ns
- Drain-source On Resistance-Max :
- 0.0068Ohm
- Vgs (Max) :
- ±20V
- Datasheets
- PSMN7R0-100PS127
Specialized ICs Nexperia PSMN7R0-100PS,127 Overview
The Specialized ICs Nexperia PSMN7R0-100PS,127 represents a robust N-Channel MOSFET designed for high-efficiency power management applications. Featuring a low on-resistance of 12m Ω at a gate drive of 10V, it ensures minimal power loss and superior thermal performance. The device supports a drain-source voltage of up to 100V, accommodating higher voltage applications while maintaining stability and reliability. With a continuous drain current capacity of 100A, it can handle substantial current loads, making it ideal for demanding environments. Additionally, the MOSFET boasts a gate-source voltage of ±20V, providing flexible gate drive requirements and enhancing its versatility across various electronic designs.
Key Features
- Low on-resistance: 12m Ω at 10V, optimizing power efficiency.
- High drain-source voltage: 100V, suitable for high-voltage applications.
- Continuous drain current: 100A, for robust performance in high-load conditions.
- High gate-source voltage tolerance: ±20V, offers flexible design options.
- Input capacitance: 6686pF at 50V, facilitates efficient switching.
- Total Gate Charge: 125nC at 10V, ensuring quick turn-on and turn-off times.
Applications
The Specialized ICs Nexperia PSMN7R0-100PS,127 is ideal for a range of applications where power efficiency and reliability are critical. Its capabilities make it suitable for:
- Consumer electronics requiring efficient power management
- Industrial motor drives providing enhanced operational efficiency
- Uninterruptible power supplies ensuring continuous power delivery
- Advanced computing systems with high power needs
- Automotive applications including electric vehicle power systems
- Solar power inverters for renewable energy systems
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