PSMN6R5-80BS118

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Power Dissipation :

210W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2012

Drain-source On Resistance-Max :

0.0069Ohm

Terminal Position :

Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Rise Time :

24ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

100A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

4461pF @ 40V

Fall Time (Typ) :

22 ns

Max Dual Supply Voltage :

80V

Pin Count :

3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6.9m Ω @ 15A, 10V

Pulsed Drain Current-Max (IDM) :

470A

Mounting Type :

Surface Mount

Number of Pins :

3

Vgs (Max) :

±20V

Turn-Off Delay Time :

57 ns

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

FET Type :

N-Channel

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

700 mJ

Turn On Delay Time :

26 ns

Power Dissipation-Max :

210W Tc

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Breakdown Voltage :

73V

Gate to Source Voltage (Vgs) :

4.3V

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant