PSMN6R5-80BS118

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

470A

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Max Dual Supply Voltage :

80V

Power Dissipation-Max :

210W Tc

Drain-source On Resistance-Max :

0.0069Ohm

Pin Count :

3

Rds On (Max) @ Id, Vgs :

6.9m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

57 ns

Power Dissipation :

210W

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

700 mJ

Gate to Source Voltage (Vgs) :

4.3V

Vgs(th) (Max) @ Id :

4V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Turn On Delay Time :

26 ns

Fall Time (Typ) :

22 ns

Continuous Drain Current (ID) :

100A

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Rise Time :

24ns

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

4461pF @ 40V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Pins :

3

Drain to Source Breakdown Voltage :

73V

Terminal Position :

Single