PSMN6R0-25YLB115

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

1.95V @ 1mA

JEDEC-95 Code :

MO-235

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel

Surface Mount :

yes

Number of Pins :

4

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

58W Tc

Terminal Form :

Gull wing

Number of Terminations :

4

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Package / Case :

SC-100, SOT-669

Fall Time (Typ) :

9 ns

Power Dissipation :

58W

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

292A

Input Capacitance (Ciss) (Max) @ Vds :

1099pF @ 12V

Radiation Hardening :

No

Number of Elements :

1

Rise Time :

17ns

Drain to Source Breakdown Voltage :

25V

Continuous Drain Current (ID) :

73A

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 20A, 10V

Published :

2011

Avalanche Energy Rating (Eas) :

15 mJ

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Turn-Off Delay Time :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

19.3nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

16 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0079Ohm

JESD-609 Code :

e3

Case Connection :

DRAIN

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

25V