PSMN6R0-25YLB115

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Turn On Delay Time :

16 ns

Drain to Source Breakdown Voltage :

25V

Pulsed Drain Current-Max (IDM) :

292A

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

19.3nC @ 10V

Power Dissipation :

58W

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

25V

Power Dissipation-Max :

58W Tc

Continuous Drain Current (ID) :

73A

Pin Count :

4

Avalanche Energy Rating (Eas) :

15 mJ

Published :

2011

Additional Feature :

High Reliability

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1099pF @ 12V

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

FET Type :

N-Channel

Fall Time (Typ) :

9 ns

Turn-Off Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0079Ohm

Rise Time :

17ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Pins :

4

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Package / Case :

SC-100, SOT-669

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 20A, 10V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Radiation Hardening :

No

JEDEC-95 Code :

MO-235

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant