PSMN5R5-60YS115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

MO-235

Case Connection :

DRAIN

Published :

2009

Continuous Drain Current (ID) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.055Ohm

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Terminations :

4

Power Dissipation-Max :

130W Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Factory Lead Time :

12 Weeks

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 15A, 10V

Drain to Source Voltage (Vdss) :

60V

Package / Case :

SC-100, SOT-669

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Application :

SWITCHING

Number of Pins :

4

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3501pF @ 30V