PSMN5R0-80BS118

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Vgs (Max) :

±20V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

6793pF @ 40V

Turn On Delay Time :

33 ns

Power Dissipation-Max :

270W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

73 ns

Rise Time :

21ns

Fall Time (Typ) :

14 ns

Transistor Application :

SWITCHING

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

101nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Max Dual Supply Voltage :

80V

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

80V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

100A

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

270W

Case Connection :

DRAIN

FET Type :

N-Channel

Element Configuration :

Single

Published :

2012

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

598A

Pin Count :

3

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 1mA