PSMN5R0-80BS118

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

33 ns

Pulsed Drain Current-Max (IDM) :

598A

Turn-Off Delay Time :

73 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Element Configuration :

Single

Max Dual Supply Voltage :

80V

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

6793pF @ 40V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

14 ns

Terminal Form :

Gull wing

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Published :

2012

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Contact Plating :

Tin

FET Type :

N-Channel

Rise Time :

21ns

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

100A

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

101nC @ 10V

Power Dissipation-Max :

270W Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

270W

Number of Terminations :

2

Drain to Source Breakdown Voltage :

80V

Transistor Element Material :

SILICON