PSMN4R5-40PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Continuous Drain Current (ID) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

2683pF @ 12V

Terminal Finish :

Tin (Sn)

Height :

6.35mm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drain-source On Resistance-Max :

0.0046Ohm

Turn On Delay Time :

19 ns

Length :

31.75mm

Pulsed Drain Current-Max (IDM) :

545A

Packaging :

Tube

Terminal Position :

Single

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

30 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

42.3nC @ 10V

Mounting Type :

Through Hole

Surface Mount :

No

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Rise Time :

23ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Max Dual Supply Voltage :

40V

Number of Elements :

1

Weight :

13.607771g

Lead Free :

Lead Free

Published :

2009

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 25A, 10V

Drain to Source Breakdown Voltage :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

148W

Width :

6.35mm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Radiation Hardening :

No

Fall Time (Typ) :

9 ns

RoHS Status :

ROHS3 Compliant

Pin Count :

3

JESD-609 Code :

e3

Power Dissipation-Max :

148W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

JEDEC-95 Code :

TO-220AB