PSMN4R4-80PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn On Delay Time :

34.7 ns

Current :

100A

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Dual Supply Voltage :

80V

Mounting Type :

Through Hole

Lead Free :

Lead Free

Turn-Off Delay Time :

66 ns

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

306W

Case Connection :

DRAIN

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Height :

6.35mm

Length :

44.45mm

Rise Time :

38.1ns

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Voltage :

80V

Width :

6.35mm

Power Dissipation-Max :

306W Tc

FET Type :

N-Channel

Weight :

453.59237mg

Drain to Source Breakdown Voltage :

80V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 15A, 10V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

Surface Mount :

No

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Factory Lead Time :

12 Weeks

Published :

2009

Packaging :

Tube

Continuous Drain Current (ID) :

100A

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

18.4 ns

Transistor Element Material :

SILICON