PSMN4R3-80PS

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Radiation Hardening :

No

Transistor Application :

SWITCHING

Rise Time :

29ns

Max Dual Supply Voltage :

80V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Number of Terminations :

3

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

8161pF @ 40V

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 25A, 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

306W

Continuous Drain Current (ID) :

120A

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Power Dissipation-Max :

306W Tc

FET Type :

N-Channel

Published :

2011

Drain to Source Breakdown Voltage :

80V

Fall Time (Typ) :

33 ns

Turn On Delay Time :

38 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Turn-Off Delay Time :

94 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Avalanche Energy Rating (Eas) :

676 mJ

Factory Lead Time :

12 Weeks

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Vgs (Max) :

±20V