PSMN4R3-80ES,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

111nC @ 10V

Continuous Drain Current (ID) :

120A

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

676 mJ

Power Dissipation :

306W

Pulsed Drain Current-Max (IDM) :

688A

Power Dissipation-Max :

306W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Pins :

3

Max Dual Supply Voltage :

80V

Published :

2011

Fall Time (Typ) :

33 ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

94 ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

29ns

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Number of Terminations :

3

FET Type :

N-Channel

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 25A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

38 ns

Case Connection :

DRAIN

Number of Elements :

1

Drain to Source Breakdown Voltage :

80V

Radiation Hardening :

No

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

8161pF @ 40V

Surface Mount :

No

Gate to Source Voltage (Vgs) :

20V