PSMN4R3-30PL,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

103W Tc

Pin Count :

3

Rise Time :

58ns

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 15A, 10V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Length :

31.75mm

Number of Pins :

3

Width :

6.35mm

FET Type :

N-Channel

Fall Time (Typ) :

21 ns

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

41.5nC @ 10V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

44 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2009

Drain-source On Resistance-Max :

0.0062Ohm

Power Dissipation :

103W

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 12V

Turn On Delay Time :

28 ns

Weight :

453.59237mg

Factory Lead Time :

12 Weeks

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

465A

Drain to Source Breakdown Voltage :

30V

Avalanche Energy Rating (Eas) :

74 mJ

Number of Elements :

1

Max Dual Supply Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Position :

Single

Height :

6.35mm

Packaging :

Tube

Terminal Finish :

Tin (Sn)