PSMN4R1-30YLC,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Drain Current-Max (Abs) (ID) :

90A

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

16 ns

Max Dual Supply Voltage :

30V

Max Operating Temperature :

175°C

Number of Terminations :

4

Terminal Position :

Single

Power Dissipation-Max :

67W Tc

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Pins :

4

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Additional Feature :

High Reliability

Rise Time :

19ns

Pulsed Drain Current-Max (IDM) :

360A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

4.35m Ω @ 20A, 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Case Connection :

DRAIN

Published :

2011

Drain-source On Resistance-Max :

0.0057Ohm

Terminal Form :

Gull wing

Pin Count :

4

Power Dissipation :

64W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MO-235

Surface Mount :

yes

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

10 ns

Continuous Drain Current (ID) :

92A

Min Operating Temperature :

-55°C

Package / Case :

SC-100, SOT-669

Turn-Off Delay Time :

24 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Number of Elements :

1

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1502pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V