PSMN3R5-30YL,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

45 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Surface Mount :

yes

Max Dual Supply Voltage :

30V

Published :

2011

Width :

6.35mm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Height :

6.35mm

Number of Terminations :

4

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0056Ohm

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Vgs (Max) :

±20V

JEDEC-95 Code :

MO-235

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 15A, 10V

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Weight :

4.535924g

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

4

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Transistor Application :

SWITCHING

Length :

6.35mm

Power Dissipation-Max :

74W Tc

Continuous Drain Current (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2458pF @ 12V

FET Type :

N-Channel

Power Dissipation :

74W

Terminal Form :

Gull wing

Fall Time (Typ) :

18 ns

Turn On Delay Time :

33 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Pin Count :

4

Package / Case :

SC-100, SOT-669

Rise Time :

50ns

Configuration :

SINGLE WITH BUILT-IN DIODE