PSMN3R5-30YL,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Terminal Form :

Gull wing

Power Dissipation :

74W

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Weight :

4.535924g

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

30V

Fall Time (Typ) :

18 ns

Number of Pins :

4

Continuous Drain Current (ID) :

100A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Mounting Type :

Surface Mount

Turn-Off Delay Time :

45 ns

Number of Terminations :

4

Factory Lead Time :

12 Weeks

Package / Case :

SC-100, SOT-669

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Vgs (Max) :

±20V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2458pF @ 12V

Radiation Hardening :

No

Height :

6.35mm

Turn On Delay Time :

33 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Length :

6.35mm

Case Connection :

DRAIN

Pin Count :

4

Width :

6.35mm

Number of Elements :

1

Published :

2011

Power Dissipation-Max :

74W Tc

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Drain-source On Resistance-Max :

0.0056Ohm

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 15A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

MO-235

Lead Free :

Lead Free

Rise Time :

50ns

Operating Mode :

ENHANCEMENT MODE