PSMN3R5-30YL,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Input Capacitance (Ciss) (Max) @ Vds :

2458pF @ 12V

Surface Mount :

yes

Case Connection :

DRAIN

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs (Max) :

±20V

Fall Time (Typ) :

18 ns

Weight :

4.535924g

Package / Case :

SC-100, SOT-669

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Number of Elements :

1

JEDEC-95 Code :

MO-235

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

74W Tc

Pin Count :

4

Height :

6.35mm

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Rise Time :

50ns

Max Dual Supply Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 15A, 10V

Turn On Delay Time :

33 ns

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Pins :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

45 ns

Drain-source On Resistance-Max :

0.0056Ohm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Published :

2011

Number of Terminations :

4

Continuous Drain Current (ID) :

100A

Length :

6.35mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

74W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.35mm