PSMN3R4-30PL,127
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- Mfr.Part #
- PSMN3R4-30PL,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V SOT78
- Stock
- 7,994
- In Stock ：
- 7,994
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 4.1mOhm
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.15V @ 1mA
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 609A
- Turn-Off Delay Time :
- 59 ns
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 10A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Published :
- 2010
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3907pF @ 12V
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Power Dissipation :
- 114W
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 73ns
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Drain to Source Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Fall Time (Typ) :
- 28 ns
- Pin Count :
- 3
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Turn On Delay Time :
- 40 ns
- Continuous Drain Current (ID) :
- 100A
- Power Dissipation-Max :
- 114W Tc
- Datasheets
- PSMN3R4-30PL,127
N-Channel Tube 3.4m Ω @ 10A, 10V ±20V 3907pF @ 12V 64nC @ 10V TO-220-3
PSMN3R4-30PL,127 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 3907pF @ 12V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 100A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 59 ns.Its maximum pulsed drain current is 609A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 40 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
PSMN3R4-30PL,127 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 59 ns
based on its rated peak drain current 609A.
PSMN3R4-30PL,127 Applications
There are a lot of Nexperia USA Inc.
PSMN3R4-30PL,127 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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