PSMN3R4-30PL,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Vgs (Max) :

±20V

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

609A

Factory Lead Time :

12 Weeks

Number of Pins :

3

Case Connection :

DRAIN

Power Dissipation :

114W

Rise Time :

73ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Published :

2010

Max Dual Supply Voltage :

30V

Number of Terminations :

3

Drain to Source Breakdown Voltage :

30V

Packaging :

Tube

Lead Free :

Lead Free

Package / Case :

TO-220-3

Power Dissipation-Max :

114W Tc

Radiation Hardening :

No

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Turn-Off Delay Time :

59 ns

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Continuous Drain Current (ID) :

100A

Avalanche Energy Rating (Eas) :

200 mJ

Input Capacitance (Ciss) (Max) @ Vds :

3907pF @ 12V

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Fall Time (Typ) :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Resistance :

4.1mOhm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Number of Elements :

1

Turn On Delay Time :

40 ns

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ