PSMN3R2-30YLC,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

39 mJ

Vgs(th) (Max) @ Id :

1.95V @ 1mA

JEDEC-95 Code :

MO-235

Transistor Element Material :

SILICON

Package / Case :

SC-100, SOT-669

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

30V

Vgs (Max) :

±20V

Number of Terminations :

4

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Pin Count :

4

FET Type :

N-Channel

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Turn On Delay Time :

19.5 ns

Rise Time :

24ns

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

Gull wing

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Pins :

4

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

29.5nC @ 10V

Surface Mount :

yes

Turn-Off Delay Time :

31 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Published :

2011

Continuous Drain Current (ID) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

2081pF @ 15V

Fall Time (Typ) :

14 ns

Power Dissipation-Max :

92W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 25A, 10V

Power Dissipation :

92W