PSMN3R0-60BS

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Rise Time :

26ns

Fall Time (Typ) :

22 ns

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

100A

Max Dual Supply Voltage :

60V

Turn-Off Delay Time :

77 ns

Surface Mount :

yes

Element Configuration :

Single

Power Dissipation-Max :

306W Tc

Power Dissipation :

306W

Pulsed Drain Current-Max (IDM) :

824A

Published :

2012

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Turn On Delay Time :

31 ns

Number of Terminations :

2

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Avalanche Energy Rating (Eas) :

800 mJ

Input Capacitance (Ciss) (Max) @ Vds :

8079pF @ 30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA