PSMN2R9-25YLC,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

92W

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs (Max) :

±20V

Lead Free :

Lead Free

Additional Feature :

High Reliability

Case Connection :

DRAIN

Package / Case :

SC-100, SOT-669

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

MO-235

Continuous Drain Current (ID) :

100A

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Rise Time :

19ns

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Number of Elements :

1

Power Dissipation-Max :

92W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

25V

Number of Terminations :

4

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Pin Count :

4

Fall Time (Typ) :

13 ns

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Turn On Delay Time :

19.5 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Form :

Gull wing

Number of Pins :

4

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Resistance :

4.1mOhm

Drain to Source Breakdown Voltage :

25V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2083pF @ 12V

FET Type :

N-Channel

Turn-Off Delay Time :

32 ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.15m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)