PSMN2R8-25MLC115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

88W

Mounting Type :

Surface Mount

Published :

2012

Pulsed Drain Current-Max (IDM) :

536A

Drain to Source Breakdown Voltage :

25V

Turn-Off Delay Time :

19.9 ns

Rise Time :

24.6ns

Turn On Delay Time :

16.4 ns

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Continuous Drain Current (ID) :

70A

Number of Pins :

8

JESD-30 Code :

R-PSSO-G4

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Power Dissipation-Max :

88W Tc

Reference Standard :

IEC-60134

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

37.7nC @ 10V

Pin Count :

8

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Terminal Position :

Single

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Factory Lead Time :

26 Weeks

Avalanche Energy Rating (Eas) :

77 mJ

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.00375Ohm

Package / Case :

SOT-1210, 8-LFPAK33

Max Dual Supply Voltage :

25V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

1.95V

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Terminal Form :

Gull wing

Fall Time (Typ) :

13.1 ns

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2432pF @ 12.5V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)