PSMN2R8-25MLC115

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Gate Charge (Qg) (Max) @ Vgs :

37.7nC @ 10V

Package / Case :

SOT-1210, 8-LFPAK33

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

88W Tc

Pulsed Drain Current-Max (IDM) :

536A

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2012

Reference Standard :

IEC-60134

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

1.95V

Factory Lead Time :

26 Weeks

Max Dual Supply Voltage :

25V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2432pF @ 12.5V

Terminal Form :

Gull wing

Rise Time :

24.6ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

88W

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Continuous Drain Current (ID) :

70A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Number of Elements :

1

Pin Count :

8

Turn-Off Delay Time :

19.9 ns

FET Type :

N-Channel

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G4

Number of Pins :

8

Case Connection :

DRAIN

Number of Terminations :

4

Transistor Element Material :

SILICON

Fall Time (Typ) :

13.1 ns

Turn On Delay Time :

16.4 ns

Avalanche Energy Rating (Eas) :

77 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.00375Ohm