PSMN2R6-30YLC,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Packaging :

Tape and Reel (TR)

Resistance :

3.65mOhm

Pin Count :

4

Terminal Position :

Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2435pF @ 15V

Turn On Delay Time :

35 ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

50 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Radiation Hardening :

No

Lead Free :

Lead Free

Power Dissipation-Max :

106W Tc

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 25A, 10V

Factory Lead Time :

12 Weeks

Surface Mount :

yes

Rise Time :

24ns

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Published :

2011

Max Dual Supply Voltage :

30V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

JEDEC-95 Code :

MO-235

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

42 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Fall Time (Typ) :

37 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

106W

Number of Elements :

1

Package / Case :

SC-100, SOT-669

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

575A

Vgs(th) (Max) @ Id :

1.95V @ 1mA