PSMN2R2-40PS

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

962A

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 25A, 10V

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

100A

Transistor Application :

SWITCHING

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Elements :

1

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

40V

Power Dissipation-Max :

306W Tc

Pin Count :

3

Surface Mount :

No

Packaging :

Tube

Package / Case :

TO-220-3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

40V

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

8423pF @ 20V

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

1240 mJ

Drain-source On Resistance-Max :

0.0021Ohm

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V