PSMN2R2-40BS

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

8423pF @ 20V

Max Dual Supply Voltage :

40V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 25A, 10V

Number of Terminations :

2

Turn On Delay Time :

33.2 ns

Element Configuration :

Single

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.0022Ohm

Continuous Drain Current (ID) :

100A

Published :

2012

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

962A

Avalanche Energy Rating (Eas) :

1.24 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

306W Tc

Rise Time :

40.4ns

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

25.2 ns

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

306W

Turn-Off Delay Time :

66.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

40V

Number of Pins :

3