PSMN2R0-60ES,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

137 nC @ 10 V

Series :

*

Manufacturer :

Marathon Electric

Supplier Device Package :

I2PAK

Technology :

MOSFET (Metal Oxide)

Package :

Tube

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Base Product Number :

PSMN2

FET Type :

N-Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

9997 pF @ 30 V

Power Dissipation (Max) :

338W (Tc)

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 25A, 10V

FET Feature :

-

Product Status :

Active

Drain to Source Voltage (Vdss) :

60 V

Current - Continuous Drain (Id) @ 25°C :

120A (Tc)

Mounting Type :

Through Hole