PSMN1R5-40PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

9710pF @ 20V

FET Type :

N-Channel

Continuous Drain Current (ID) :

120A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Pin Count :

3

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 25A, 10V

Radiation Hardening :

No

Fall Time (Typ) :

53 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

136nC @ 10V

JESD-609 Code :

e3

Published :

2013

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

40V

Number of Elements :

1

Rise Time :

66ns

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Number of Pins :

3

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Lead Free :

Lead Free

Power Dissipation-Max :

338W Tc

Power Dissipation :

338W

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

45.2 ns

Drain to Source Breakdown Voltage :

40V

Packaging :

Tube

Terminal Position :

Single

Turn-Off Delay Time :

111 ns

Surface Mount :

No