PSMN1R2-30YLC,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Rds On (Max) @ Id, Vgs :

1.25m Ω @ 25A, 10V

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

209 mJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-100, SOT-669

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Power Dissipation :

215W

Rise Time :

60ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Turn-Off Delay Time :

75 ns

Published :

2011

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.95V @ 1mA

Continuous Drain Current (ID) :

100A

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Additional Feature :

HIGH RELIABILITY, ULTRA LOW RESISTANCE

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Vgs (Max) :

±20V

Pin Count :

4

Surface Mount :

yes

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Fall Time (Typ) :

39 ns

Power Dissipation-Max :

215W Tc

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

36 ns

Input Capacitance (Ciss) (Max) @ Vds :

5093pF @ 15V

JEDEC-95 Code :

MO-235

Terminal Form :

Gull wing

Max Dual Supply Voltage :

30V

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant