PSMN063-150D,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Series :

TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.063Ohm

Case Connection :

DRAIN

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

502 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Published :

2009

Pin Count :

3

Drain Current-Max (Abs) (ID) :

29A

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Elements :

1

Reach Compliance Code :

not_compliant

Surface Mount :

yes

HTS Code :

8541.29.00.75

Current - Continuous Drain (Id) @ 25°C :

29A Tc

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

116A

Rds On (Max) @ Id, Vgs :

63m Ω @ 15A, 10V

Factory Lead Time :

26 Weeks

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

150V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

150V

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 25V

Power Dissipation-Max :

150W Tc