PSMN057-200B,118

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

78 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

HTS Code :

8541.29.00.75

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

3750pF @ 25V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

105 ns

Power Dissipation :

250W

Drain-source On Resistance-Max :

0.057Ohm

Case Connection :

DRAIN

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

156A

Number of Terminations :

2

Turn On Delay Time :

18 ns

Drain to Source Breakdown Voltage :

200V

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Max Dual Supply Voltage :

200V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

39A

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Published :

2013

Terminal Form :

Gull wing

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Rise Time :

58ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Terminal Finish :

Tin (Sn)

Series :

TrenchMOS™

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

57m Ω @ 17A, 10V

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Power Dissipation-Max :

250W Tc

Surface Mount :

yes