PSMN038-100K518
- Mfr.Part #
- PSMN038-100K518
- Manufacturer
- Nexperia
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- NOW NEXPERIA SMALL SIGNAL FIELD-
- Stock
- 5,904
- In Stock :
- 5,904
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- JESD-609 Code :
- e4
- Fall Time (Typ) :
- 25 ns
- Terminal Form :
- Gull wing
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Turn-Off Delay Time :
- 50 ns
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Power Dissipation :
- 3.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Series :
- TrenchMOS™
- Transistor Application :
- SWITCHING
- Max Dual Supply Voltage :
- 100V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 100V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 8
- Continuous Drain Current (ID) :
- 6.3A
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Voltage :
- 100V
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Factory Lead Time :
- 16 Weeks
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 5.2A, 10V
- Turn On Delay Time :
- 15 ns
- JEDEC-95 Code :
- MS-012AA
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Published :
- 1997
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 3.5W Tc
- Current :
- 63A
- Number of Pins :
- 8
- Input Capacitance (Ciss) (Max) @ Vds :
- 1740pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 13ns
- Datasheets
- PSMN038-100K518
Specialized ICs Nexperia PSMN038-100K518 Overview
The Specialized ICs Nexperia PSMN038-100K518 is an advanced N-channel MOSFET, specifically designed for high-efficiency, high-speed switching applications. Boasting a low on-state resistance of 38mΩ at 5.2A, this component ensures minimal power loss and heat generation, enhancing overall system reliability. The device supports a maximum drain-to-source voltage of 100V, making it suitable for robust industrial applications. Additionally, the integration of a 1740pF input capacitance at 25V facilitates better control over gate charges, thus improving responsiveness. This MOSFET comes packaged in an 8-SOIC format with a 3.90mm width, optimized for compact circuit designs. It supports dual supply voltages up to 100V and features an efficient gate drive characteristic, operating at 10V to reduce overall power consumption.
Specialized ICs Nexperia PSMN038-100K518 Key Features
- Continuous drain current (ID) of 6.3A
- Drain-to-source breakdown voltage of 100V
- Low on-state resistance of 38mΩ at 5.2A, 10V
- High input capacitance of 1740pF at 25V
- Turn-off delay time of 50 ns
- Compact package 8-SOIC (0.154, 3.90mm Width)
Specialized ICs Nexperia PSMN038-100K518 Applications
The robust specifications of the Specialized ICs Nexperia PSMN038-100K518 MOSFET make it ideal for a variety of demanding applications. These include:
- Lighting systems requiring reliable, high-frequency switching
- Uninterruptible Power Supplies (UPS) for seamless power backup
- AC-DC power supplies in industrial and consumer electronics
- Synchronous Rectification for ATX1 Server, Telecom PSU
- Motor drives requiring efficient, high-voltage operations
- Micro Solar Inverters for renewable energy applications
- DC/DC converters for voltage regulation in electronic devices
- Power tools demanding durable and efficient power management
- Synchronous Rectification to enhance efficiency in power conversion
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