PSMN038-100K518

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Mfr.Part #
PSMN038-100K518
Manufacturer
Nexperia
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
NOW NEXPERIA SMALL SIGNAL FIELD-
Stock
5,904
In Stock :
5,904

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Manufacturer :
Nexperia
Product Category :
Specialized ICs
Number of Elements :
1
ECCN Code :
EAR99
JESD-609 Code :
e4
Fall Time (Typ) :
25 ns
Terminal Form :
Gull wing
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Turn-Off Delay Time :
50 ns
Transistor Element Material :
SILICON
Surface Mount :
yes
Terminal Position :
Dual
Power Dissipation :
3.5W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
RoHS Compliant
Moisture Sensitivity Level (MSL) :
2 (1 Year)
Series :
TrenchMOS™
Transistor Application :
SWITCHING
Max Dual Supply Voltage :
100V
Radiation Hardening :
No
Mounting Type :
Surface Mount
Packaging :
Tape and Reel (TR)
Drain to Source Breakdown Voltage :
100V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
8
Continuous Drain Current (ID) :
6.3A
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Voltage :
100V
Terminal Finish :
NICKEL PALLADIUM GOLD
Factory Lead Time :
16 Weeks
Pin Count :
8
Rds On (Max) @ Id, Vgs :
38m Ω @ 5.2A, 10V
Turn On Delay Time :
15 ns
JEDEC-95 Code :
MS-012AA
Vgs(th) (Max) @ Id :
4V @ 1mA
Published :
1997
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±20V
Power Dissipation-Max :
3.5W Tc
Current :
63A
Number of Pins :
8
Input Capacitance (Ciss) (Max) @ Vds :
1740pF @ 25V
Gate to Source Voltage (Vgs) :
20V
Rise Time :
13ns
Datasheets
PSMN038-100K518
Introducing Specialized ICs Nexperia PSMN038-100K518 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Mounting Type:Surface Mount, Number of Terminations:8, Voltage:100V, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, PSMN038-100K518 pinout, PSMN038-100K518 datasheet PDF, PSMN038-100K518 amp .Beyond Specialized ICs Nexperia PSMN038-100K518 ,we also offer AD8232ACPZ-R7, TDA21470AUMA1, DS2413P+, Our vast inventory has you covered. Contact us now for immediate solutions.



Specialized ICs Nexperia PSMN038-100K518 Overview


The Specialized ICs Nexperia PSMN038-100K518 is an advanced N-channel MOSFET, specifically designed for high-efficiency, high-speed switching applications. Boasting a low on-state resistance of 38mΩ at 5.2A, this component ensures minimal power loss and heat generation, enhancing overall system reliability. The device supports a maximum drain-to-source voltage of 100V, making it suitable for robust industrial applications. Additionally, the integration of a 1740pF input capacitance at 25V facilitates better control over gate charges, thus improving responsiveness. This MOSFET comes packaged in an 8-SOIC format with a 3.90mm width, optimized for compact circuit designs. It supports dual supply voltages up to 100V and features an efficient gate drive characteristic, operating at 10V to reduce overall power consumption.


Specialized ICs Nexperia PSMN038-100K518 Key Features


  • Continuous drain current (ID) of 6.3A
  • Drain-to-source breakdown voltage of 100V
  • Low on-state resistance of 38mΩ at 5.2A, 10V
  • High input capacitance of 1740pF at 25V
  • Turn-off delay time of 50 ns
  • Compact package 8-SOIC (0.154, 3.90mm Width)


Specialized ICs Nexperia PSMN038-100K518 Applications


The robust specifications of the Specialized ICs Nexperia PSMN038-100K518 MOSFET make it ideal for a variety of demanding applications. These include:

  • Lighting systems requiring reliable, high-frequency switching
  • Uninterruptible Power Supplies (UPS) for seamless power backup
  • AC-DC power supplies in industrial and consumer electronics
  • Synchronous Rectification for ATX1 Server, Telecom PSU
  • Motor drives requiring efficient, high-voltage operations
  • Micro Solar Inverters for renewable energy applications
  • DC/DC converters for voltage regulation in electronic devices
  • Power tools demanding durable and efficient power management
  • Synchronous Rectification to enhance efficiency in power conversion
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