PSMN030-150P,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Package / Case :

TO-220-3

Power Dissipation-Max :

250W Tc

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

30m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

55.5A Tc

Turn-Off Delay Time :

97 ns

Lead Free :

Lead Free

Pin Count :

3

Turn On Delay Time :

18 ns

Drain to Source Breakdown Voltage :

150V

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

55.5A

Packaging :

Tube

Power Dissipation :

250W

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

3680pF @ 25V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Vgs (Max) :

±20V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

222A

ECCN Code :

EAR99

Surface Mount :

No

Mounting Type :

Through Hole

Max Dual Supply Voltage :

150V

Rise Time :

71ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Pins :

3

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Published :

2002

FET Type :

N-Channel

Series :

TrenchMOS™

Fall Time (Typ) :

76 ns

HTS Code :

8541.29.00.75

Drive Voltage (Max Rds On,Min Rds On) :

10V