PSMN028-100YS,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Drain to Source Breakdown Voltage :

100V

Surface Mount :

No

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Number of Elements :

1

Power Dissipation :

89W

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

68 mJ

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0275Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

15 ns

Rise Time :

14ns

Continuous Drain Current (ID) :

42A

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2010

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Number of Pins :

4

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

30A

Turn-Off Delay Time :

33 ns

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 15A, 10V

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~175°C TJ

Package / Case :

SC-100, SOT-669

Power Dissipation-Max :

89W Tc

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1634pF @ 50V

Radiation Hardening :

No

Transistor Element Material :

SILICON

JEDEC-95 Code :

MO-235

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

100V

Terminal Form :

THROUGH-HOLE

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V