PSMN027-100PS127

Manufacturer :

Nexperia

Product Category :

Specialized ICs

Fall Time (Typ) :

8.9 ns

Power Dissipation :

103W

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

59 mJ

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0268Ohm

Turn On Delay Time :

14.4 ns

Continuous Drain Current (ID) :

37A

Number of Elements :

1

FET Type :

N-Channel

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

26.8m Ω @ 15A, 10V

JESD-609 Code :

e3

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

103W Tc

Rise Time :

11.4ns

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

Number of Pins :

3

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

100V

Turn-Off Delay Time :

29.6 ns

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Published :

2011

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Vgs (Max) :

±20V

Surface Mount :

No

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1624pF @ 50V

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON