PSMN018-80YS115
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- Mfr.Part #
- PSMN018-80YS115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- NOW NEXPERIA 45A, 80V, 0.018OHM,
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Nexperia
- Product Category :
- Specialized ICs
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 89W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 80V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- MO-235
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640pF @ 40V
- Max Dual Supply Voltage :
- 80V
- Pin Count :
- 4
- Number of Elements :
- 1
- Number of Pins :
- 4
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 45A
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- SC-100, SOT-669
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 5A, 10V
- Published :
- 2010
- Power Dissipation :
- 89W
- Surface Mount :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Datasheets
- PSMN018-80YS115
Specialized ICs Nexperia PSMN018-80YS,115 Overview
The Specialized ICs Nexperia PSMN018-80YS,115 is a high-performance N-channel MOSFET that exemplifies cutting-edge power management technology. Designed to operate efficiently with a drain-to-source voltage of 80V and a continuous drain current of 45A, this device is ideally suited for high-demand applications. Its low on-resistance of just 18mΩ at 10V ensures minimal power loss, making it an excellent choice for energy-sensitive setups. The MOSFET's robust design is encapsulated in a compact SC-100, SOT-669 package, allowing for high-density board layouts without compromising performance. Its advanced characteristics include a gate-source voltage ranging from -20V to 20V and a maximum gate charge of 26nC at 10V, which facilitates fast switching and reduces switching losses, enhancing the overall efficiency of power circuits.
Key Features
- Low on-resistance of 18mΩ at 10V enhances efficiency and reduces thermal output.
- High drain-to-source breakdown voltage of 80V suitable for rigorous applications.
- Continuous drain current (ID) capability of 45A for high power applications.
- Compact packaging (SC-100, SOT-669) allows for efficient use of PCB space.
- Gate-source voltage (VGS) from -20V to +20V, providing flexible drive characteristics.
- Input capacitance of 1640pF at 40V, optimized for fast switching applications.
Applications
The Specialized ICs Nexperia PSMN018-80YS,115 MOSFET is versatile and can be deployed in a multitude of applications, particularly where high efficiency and power density are crucial. Notable applications include:
- AC-DC power supplies that require efficient and reliable switching.
- Synchronous rectification in server and telecom power supplies.
- Motor drives and uninterruptible power supplies, where reliability under load is crucial.
- Micro solar inverters for renewable energy systems.
- DC/DC converters for distributed power systems.
- Power tools requiring robust power management solutions.
- Battery protection circuits to ensure safety and longevity of battery packs.
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