PSMN017-80PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

17m Ω @ 10A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.017Ohm

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

80V

Terminal Position :

Single

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Power Dissipation-Max :

103W Tc

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Published :

2014

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1573pF @ 40V

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

DS Breakdown Voltage-Min :

80V

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Pulsed Drain Current-Max (IDM) :

200A

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

55 mJ

Drain Current-Max (Abs) (ID) :

50A

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube