PSMN017-30BL118

Manufacturer :

NXP Semiconductors

Product Category :

Specialized ICs

Continuous Drain Current (ID) :

32A

Turn On Delay Time :

10.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

154A

Input Capacitance (Ciss) (Max) @ Vds :

552pF @ 15V

Fall Time (Typ) :

5.1 ns

Terminal Position :

Single

FET Type :

N-Channel

Number of Terminations :

2

Drain to Source Breakdown Voltage :

30V

Surface Mount :

yes

Number of Elements :

1

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

17m Ω @ 10A, 10V

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

Case Connection :

DRAIN

Max Dual Supply Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Pin Count :

3

Power Dissipation-Max :

47W Tc

Gate Charge (Qg) (Max) @ Vgs :

10.7nC @ 10V

Rise Time :

9.2ns

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

11.4 ns

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Power Dissipation :

47W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING