PSMN015-110P,127

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Mfr.Part #
PSMN015-110P,127
Manufacturer
NXP Semiconductors
Package / Case
Datasheet
Download
Description
MOSFET N-CH 110V 75A TO220AB
Stock
2,565
In Stock :
2,565

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Manufacturer :
NXP Semiconductors
Product Category :
Unclassified
Series :
*
Continuous Drain Current (ID) :
75 A
Rds On Max :
15 mΩ
Number of Pins :
3
Input Capacitance :
4.9 nF
RoHS :
Compliant
Gate to Source Voltage (Vgs) :
20 V
Min Operating Temperature :
-55 °C
Package :
Bulk
Contact Plating :
Tin
Turn-On Delay Time :
25 ns
Lead Free :
Lead Free
Drain to Source Resistance :
40.5 mΩ
Product Status :
Active
Turn-Off Delay Time :
95 ns
Max Power Dissipation :
300 W
Rise Time :
65 ns
Radiation Hardening :
No
Max Operating Temperature :
175 °C
Drain to Source Breakdown Voltage :
110 V
Power Dissipation :
300 W
Max Dual Supply Voltage :
110 V
Drain to Source Voltage (Vdss) :
110 V
Base Product Number :
PSMN0
Element Configuration :
Single
Datasheets
PSMN015-110P,127
Introducing Unclassified NXP Semiconductors PSMN015-110P,127 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, PSMN015-110P,127 pinout, PSMN015-110P,127 datasheet PDF, PSMN015-110P,127 amp .Beyond Unclassified NXP Semiconductors PSMN015-110P,127 ,we also offer 5801925, F-631, 47480-0001, Our vast inventory has you covered. Contact us now for immediate solutions.

NXP Semiconductors PSMN015-110P,127


110 V

PSMN015-110P,127 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75 A amps.In this device, the drain-source breakdown voltage is 110 V and VGS=110 V, so the drain-source breakdown voltage is 110 V in this case.It is [95 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 40.5 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.As it is powered by 110 V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 110 V drain to source voltage (Vdss).

PSMN015-110P,127 Features


a continuous drain current (ID) of 75 A
a drain-to-source breakdown voltage of 110 V voltage
the turn-off delay time is 95 ns
single MOSFETs transistor is 40.5 mΩ
a 110 V drain to source voltage (Vdss)


PSMN015-110P,127 Applications


There are a lot of NXP
PSMN015-110P,127 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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