PSMN013-100PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

170W Tc

Element Configuration :

Single

Packaging :

Tube

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

68A

Turn On Delay Time :

20.7 ns

Case Connection :

DRAIN

Number of Pins :

3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Surface Mount :

No

Max Dual Supply Voltage :

100V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 15A, 10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

52.5 ns

Rise Time :

25ns

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

3195pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

68A Tc

Power Dissipation :

170W

Pin Count :

3

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

67A

Fall Time (Typ) :

24 ns

Package / Case :

TO-220-3

Published :

2012

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V