PSMN012-80PS,127

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Height :

6.35mm

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

80V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

74A

Number of Pins :

3

Pin Count :

3

Number of Terminations :

3

Case Connection :

DRAIN

Fall Time (Typ) :

6 ns

Turn On Delay Time :

19 ns

Length :

31.75mm

Input Capacitance (Ciss) (Max) @ Vds :

2782pF @ 12V

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Rise Time :

16ns

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Weight :

453.59237mg

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Radiation Hardening :

No

Lead Free :

Lead Free

Power Dissipation-Max :

148W Tc

Power Dissipation :

148W

Transistor Element Material :

SILICON

Terminal Position :

Single

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Width :

6.35mm

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

11m Ω @ 15A, 10V

JESD-609 Code :

e3

Published :

2009

Drain to Source Breakdown Voltage :

80V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

295A