PDTC143XQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Transistor Element Material :

SILICON

Resistor - Emitter Base (R2) :

10 k Ω

Number of Elements :

1

Frequency - Transition :

230MHz

Transistor Type :

NPN - Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Case Connection :

COLLECTOR

Transition Frequency :

230MHz

JESD-30 Code :

R-PDSO-N3

Package / Case :

3-XDFN Exposed Pad

Number of Terminations :

3

Terminal Form :

NO LEAD

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

280mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Series :

Automotive, AEC-Q101

Current - Collector Cutoff (Max) :

1μA

Factory Lead Time :

4 Weeks

Polarity/Channel Type :

NPN

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 2.1

Reference Standard :

AEC-Q101; IEC-60134

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Power - Max :

280mW

Published :

2014

Resistor - Base (R1) :

4.7 k Ω

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

100mV