PDTC114EE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

50V

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

Polarity/Channel Type :

NPN

Base Part Number :

PDTC114

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

230MHz

Surface Mount :

yes

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G3

HTS Code :

8541.21.00.95

Package / Case :

SC-75, SOT-416

Current - Collector Cutoff (Max) :

1μA

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

0.15W

Number of Elements :

1

Published :

2003

Transistor Element Material :

SILICON

Resistor - Base (R1) :

10 k Ω

JESD-609 Code :

e3

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10 k Ω

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Power - Max :

150mW

Transistor Type :

NPN - Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Finish :

Tin (Sn)

Current - Collector (Ic) (Max) :

100mA